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 DATA SHEET
MOS INTEGRATED CIRCUIT
PD3753
2088-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT
The PD3753 is a 2088-bit high sensitivity CCD (Charge Coupled Device) linear image sensor which changes optical images to electrical signal. The PD3753 consists of 2088-bit photocell array and a line of 2088-bit CCD charge transferred register. It contains a reset a feed-through level clamp circuit, a pulse generator, and a voltage amplifier to provide high sensitivity and low noise. It also supports low power consumption with single 5 V power supply. The
PD3753 can be driven by power supply and three input clocks owing to the built-in reset pulse generator
and a clamp pulse generator.
FEATURES
* Valid photocell * Photocell's pitch * High response sensitivity * Low noise * Peak response wavelength * Resolution * Power supply * Drive clock level * Scanning speed * Built-in circuit : 2088-bit : 14 m : Providing a response equal with the existing equivalent NEC product (PD3743) to the light from a daylight fluorescent lamp : Providing about two thirds register imbalance of the existing equivalent NEC product (PD3743) : 550 nm (green) : 8 dot/mm across the shorter side of a B4-size (257 x 364 mm) sheet : +5 V : CMOS output under +5 V operation : 1.0 ms/line : Reset feed-through level clamp circuit, reset pulse generator, clamp pulse generator
ORDERING INFORMATION
Part Number Package CCD LINEAR IMAGE SENSOR 22 PIN PLASTIC DIP (400 mil) Quality Grade Standard
PD3753CY
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
The information in this document is subject to change without notice. Document No. IC-3429 (O. D. No. IC-9002) Date Published August 1994 P Printed in Japan
(c)
1994
PD3753
BLOCK DIAGRAM
VOD 3 Reset pulse/ clamp pulse generator *Voltage amplifier *Reset feed-through level clamp circuit Optical black (OB) 18 bits, invalid 2 bits, valid photocell 2088 bits, invalid 2 bits 9 CCD register 14 1 20 AGND 13 DGND
15 2
VOUT 19
TG
2
PD3753
PIN CONFIGURATION (Top View) CCD LINEAR IMAGE SENSOR 22 PIN PLASTIC DIP (400 mil)
No connection
1
NC
NC
22
No connection
No connection
2
NC
NC
21
No connection
Output unit drain voltage
3
VOD
AGND
20
Analog GND
No connection
4
NC
V OUT
19
Output
No connection
5
NC
NC
18
No connection
No connection
6
NC
NC
17
No connection
No connection
7
NC
NC
16
No connection
No connection
8
NC
2 1
DGND
15
Shift register clock 2
Transfer gate clock
9
TG
NC
14
Shift register clock 1
No connection
10
13
Digital GND
No connection
11
NC
NC
12
No connection
PHOTOCELL STRUCTURE DIAGRAM
12 m
2 m
14 m
Channel stopper
Aluminum electrode
3
PD3753
ABSOLUTE MAXIMUM RATINGS (Ta = +25 C)
Parameter Output unit drain voltage Shift register clock voltage Transfer gate signal voltage Operating ambient temperature Storage temperature Symbol VOD V1, 2 VTG Topt Tstg Ratings -0.3 to +8 -0.3 to +8 -0.3 to +8 -25 to +60 -40 to +70 Unit V V V C C
RECOMMENDED OPERATING CONDITIONS (Ta = -25 to + 60 C)
Parameter Output unit drain voltage Shift register clock 1, 2 signal high level Shift register clock 1, 2 signal low level Transfer gate signal high level Transfer gate signal low level Data rate Symbol VOD V1H, 2H V1L, 2L VTGH VTGL fR MIN. 4.7 4.5 -0.3 4.5 -0.3 0.2 TYP. 5.0 5.0 0 V1H 0 1 MAX. 5.3 VOD + 0.2 +0.5 V1H +0.5 2 Unit V V V V V MHz
Caution When VTGH > V1H, image lag increases.
4
PD3753
ELECTRICAL CHARACTERISTICS
Ta = +25 C, VOD = 5 V, f1 = 1 MHz, data rate = 1 MHz, storage time = 10 ms light source: 3200 K halogen lamp + C500 (infrared cut filter), input clock = 5 VP-P
Parameter Saturation voltage Saturation exposure Photo response non-uniformity Average dark signal Dark signal non-uniformity Power consumption Output impedance Response Response peak wavelength Image lag Offset level Input capacitance of shift register clock pin Input capacitance of transfer gate signal pin Output fall delay time Total transfer efficiency Dynamic range Reset feed-through noise Bit noise Resolution IL VOS C1 C2 CTG td TTE DR RFSN BN MTF VOUT = 1 V, data rate = 2 MHz Vsat/DSNU Light shielding Light shielding Modulation transfer function at nyquist frequency 0 92 375 800 10 65 1500 100 130 pF ns % times mV mVP-P % VOUT = 1 V 2.5 Symbol Vsat SE PRNU ADS DSNU PW ZO RF Daylight color fluorescent lamp 63 Daylight color fluorescent lamp VOUT = 500 mV Light shielding Light shielding -8 Test Conditions MIN. 1.0 TYP. 1.2 0.013 2 1.0 4 30 0.5 90 550 7 3.0 300 14 3.5 8 8.0 +8 50 1 117 MAX. Unit V lx*s % mV mV mW k V/lx*s nm % V pF
Remark When VOD = 4.7 V, the response typically decreases to 90 % of the value under 5 V operation.
5
PD3753
TIMING CHART 1
TG
12 13 14 15 16 31 32 33 34 35 36 37 2118 2119 2120 2121 2122 2123
1 2
VOUT
VOUT unstable period 12 bits*
OB (Optical black) 18 bits
Invalid photocell 2 bits
Valid photocell 2088 bits
Invalid photocell 2 bits
Caution
Be sure not to use this period (indicated by *) as the black level, because this part is unstable.
TIMING CHART 2
t1 90%
t2 90%
1
10% 90% 10% 90%
2
10% 10%
td
VOUT
10%
Remark
: Signal output
6
2124
1
2
3
4
5
PD3753
TIMING CHART for TG, 1, 2
t3 90 % t5 t4
TG
10 % t6 90 % t7
1
2
CROSS POINTS for 1, 2
1
2
2 V or more 2 V or more
Note
Adjust cross point of 1, 2 by 1, 2 pin external input resistors. (Unit: ns)
Parameter t1 ,t2 t3, t4 t5 t6, t7 MIN. 0 0 650 0 TYP. 50 50 1000 100 MAX. (100) - (2000) -
Remark
The MAX. in the table above shows the operation range in which the output characteristics are kept almost enough for general purpose, does not show the limit above which the PD3753 is destroyed.
7
PD3753
DEFINITIONS OF CHARACTERISTIC ITEMS
1. Saturation voltage: Vsat Output signal voltage at which the response linearity is lost. 2. Saturation exposure: SE Product of intensity of illumination (lx) and storage time (s) when saturation of output voltage occurs. 3. Photo response non-uniformity: PRNU The peak/bottom ratio to the average output voltage of all the valid bits calculated by the following formula.
VMAX. or VMIN. PRNU (%) =
1 n
Vj
j=1
n
-1 x 100 n : Number of valid bits Vj : Output voltage of each bit
V MIN. Register Dark DC level V MAX.
1 n
Vj
j=1
n
4.
Average dark signal: ADS Output average voltage in light shielding.
1 ADS(mV) = n
Vj
j=1
n
5.
Dark signal non-uniformity: DSNU The difference between peak or bottom output voltage in light shielding and ADS.
ADS Register Dark DC level
DSNU MIN. DSNU MAX.
8
PD3753
6. Output impedance: Zo Output pin impedance viewed from outside. 7. Response: R Output voltage divided by exposure (lx*s). Note that the response varies with the light source. 8. Image Lag: IL The rate between the last output voltage and the next one after read out the data of a line.
TG
Light ON
OFF
VOUT V1
IL =
V1 VOUT
VOUT
x 100 (%)
9.
Bit Noise: BN Output signal distribution of a photocell by scan.
9
PD3753
STANDARD CHARACTERISTIC CURVES (Ta = +25 C)
DARK OUTPUT TEMPERATURE CHARACTERISTIC 8 2
STORAGE TIME OUTPUT VOLTAGE CHARACTERISTIC
4 1 Relative Output Voltage 2 Relative Output Voltage 0.2 0.1 0 10 20 30 40 50 1 5 Storage Time (ms) 10 Ambient Temperature T a ( C) SPECTRAL RESPONSE CHARACTERISTIC 100 400 600 800 Wavelength (nm)
1
0.5
0.25
0.1
80
Response Ratio (%)
60
40
20
0 1000 1200
10
PD3753
POWER SUPPLY VOLTAGE RESPONSE RATIO CHARACTERISTIC 110 100 90
Response Ratio (%)
0
4.5
4.7
5.0 Power Supply Voltage (V)
5.3
5.5
11
PD3753
APPLICATION EXAMPLE
+5 V 0.1F + 10 F /16 V + 0.1F +5 V 10
10 F /16 V
PD74HC04
2.2 k
PD3753CY 2
1 NC 2 NC 3 VOD 4 NC 5 NC 6 NC 7 NC 8 NC 9 TG 10 NC 11 NC NC 22 NC 21 AGND 20 VOUT 19 NC 18 NC 17 NC 16 100 2SA1005 100
VOUT
2 15 1 14
DGND 13 NC 12
47 47
1
10
TG
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
12
PD3753
PACKAGE DIMENSIONS
CCD LINEAR IMAGE SENSOR 22PIN PLASTIC DIP (400 mil)
(Unit : mm)
1bit 1.70.3
37.5 44.00.3
9.250.3
2.0
10.16 (1.99) 4.390.4 1.020.15 0.460.1 25.4 4.210.5 2.54 (5.42) 2.350.2 1
0~10
0.25
0.05
Name Plastic cap
Dimensions 42.9 x 8.35 x 0.7 2
Refractive index 1.5
1 The bottom of the package
The surface of the chip
2 The thickness of the cap over the chip 22C-1CCD-PKG2
13
PD3753
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product. For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (IEI-1207). Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. Table 1 Type of Through Hole Device
PD3753CY : CCD LINEAR IMAGE SENSOR 22 PIN PLASTIC DIP (400 mil)
Soldering Process Wave soldering (Only lead part) Soldering Conditions Solder temperature: 260 C or below, Flow time: 10 seconds or below Pin temperature: 260 C or below, Time: 10 seconds or below
Partial heating method
Caution Do not jet molten solder on the surface of package.
14
PD3753
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be Semiconductor adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS
Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function.
15
PD3753
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc.
M4 92.6


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